| Materials | Cd1-xZnxTe，x=0.04 | Type | p-type |
| Size(mm3) | 14×14×1.3, 10×10×1 | Index of Crystal Face | (111), (211) |
| Orientation and Accuracy | Low index surface orientation, Orientation Accuracy ≤0.3° | Resistivity | ρ＞106 Ω·cm |
| IR Transmission% | ≥60% | Infrared Imaging | Te inclusions≤ 2μm or Cd inclusions≤2μm |
| X-ray DCRC FWHM(FWHM) | ≤30 rad·s | Average Etch Pit density(EPD) | 1x104/cm2 ~ 5x104/cm2 |
| Surfaces Roughness | Ra≤5 nm | Packaging | 1000 class clean room, vacuum packaging |
| Storage Temperature | 22 ℃ ~ 25 ℃ | Storage Humidity | 45% ~ 60% |
The Cd0.96Zn0.04Te (CZT) is the preferred material using as a substrate, mainly due to its similar lattice constant to HgCdTe (MCT), transparency to infrared (IR) wave lengths to be detected by the MCT layer, as well as the excellent electrical properties, high absorption coefficient and moderate thermal expansion.
 Substrates28-500x400.jpg)
 Substrates29-500x400.jpg)
 Substrates28-50x40.jpg)
 Substrates29-50x40.jpg)