Orientation | <100>, <110>, <111>±0.5º | Size(mm) | 10x3, 10x5, 10x10, 15x15, 20x15, 20x20 dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm |
Thickness | 0.5mm, 1.0mm | Polishing | SSP (single surface polished) or DSP (double surface polished) |
Ra | ≤5Å(5µm×5µm) |
Basic Properties:
Growth Method | Czochralski | Crystal Structure | M3 |
Lattice Constant | a=5.65754 Å | Density | 5.323g/cm3 |
Melt Point | 937.4℃ | ||
Doped Material | No doped | Sb-doped | Ga –doped |
Type | / | N | P |
Resistivity | >35Ωcm | 0.05Ωcm | 0.05~0.1Ωcm |
EPD | <4×103∕cm2 | <4×103∕cm2 | <4×103∕cm2 |
Pure germanium is a semiconductor. Germanium can be doped with 5-valent elements such as phosphorus, arsenic and antimony (N-type) or 3-valued elements such as boron , aluminum , gallium and indium ( P-type ) and is used extensively as a semiconductor . Germanium is also a good material for infrared optical devices and solar cell substrates.