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  • GaAs(Germanium Arsenide) Crystal and Substrates
  • GaAs(Germanium Arsenide) Crystal and Substrates

GaAs(Germanium Arsenide) Crystal and Substrates

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Orientation (100) 0°±0.5°, (100) 2°±0.5°off toward <111>A,
(100)15°±0.5°off toward <111>A
Size(mm) 25×25×0.3, 10×10×0.35, 10×5×0.35, 5×5×0.35
Polishing SSP (single surface polished) or
DSP (double surface polished)
Surface Roughness ≤5Å


Basic Properties:

Growth Method VGF/ HB Crystal Structure Zinc Blende
Appearance Very dark red, vitreous crystals Density 5.3176 g/cm3
Lattice Constant 5.65×10-10m Molar Mass 144.645 g•mol-1
Band Gap@300 K 1.424eV Electronic Mobility @300K 8500 cm2/(V×s)
Thermal Conductivity@300K 0.55 W/(cm×K) Chemical Stability Insoluble in water, ethanol, methanol,
Acetone soluble in HCl
Refractive Index 3.3


Single Crystal doped Conduction Type Carrier Concentration Dislocation Density
GaAs Si No >5×1017 cm-3 <5×105 cm-2

Gallium Arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a Zinc blende crystal structure. 
Gallium Arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including indium gallium arsenide, aluminum gallium arsenide and others. And this kind of substrates has good performance under high frequency, high temperature and low temperature, low noise and high radiation tolerance.