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  • InP(Indium Phosphide) Crystal and Substrates
  • InP(Indium Phosphide) Crystal and Substrates

InP(Indium Phosphide) Crystal and Substrates

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Material InP single crystal Orientation <100>
Size(mm) Dia50.8×0.35mm,10×10×0.35mm
Surface Roughness Ra:≤5A
Polishing SSP (single surface polished) or
DSP (double surface polished)


Chemical Properties of InP Crystal:

Single Crystal Doped Conduction Type Carrier Concentration Mobility Ratio Dislocation Density Standard Size
InP / N (0.4-2)×1016 (3.5-4) ×103 5×104 Φ2×0.35mm
InP S N (0.8-3) ×1018
(4-6) ×1018
(2.0-2.4) ×103
(1.3-1.6) ×103
InP Zn P (0.6-2) ×1018 70-90 2×104 Φ2×0.35mm
InP Fe N 107-108 ≥2000 3×104 Φ2×0.35mm


Basic Properties:

Crystal Structure Tetrahedral(M4) Lattice Constant a = 5.869 Å
Density 4.81g/cm3 Melt Point 1062 °C
Molar Mass 145.792 g/mol Appearance Black cubic crystals
Chemical Stability Slightly soluble in acids Electron Mobility(@300K) 5400 cm2/(V·s)
Bandgap(@300 K) 1.344eV Thermal Conductivity(@300K) 0.68 W/(cm·K)
Refractive Index 3.55(@632.8nm)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors. InP, as one kind of compound semiconductor material, is the necessary material for LD, LED and optical detectors. With stable physical and chemical properties, InP is widely used in optical fiber communication, microwave, millimeter wave(MMV), radiation-resistant solar cells and other fields.

InP is also used in high-power and high-frequency electronics (High-electron-mobility transistor, Heterojunction bipolar transistor) because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.