Specification
Material | Standard | High Precision |
Size | ~20×20 mm2 | |
Thickness | 0.01~25 mm | |
Dimension Tolerance | +/-0.1mm | +/-0.01mm |
Wavefront Distortion | λ/4 | λ/6 |
Surface Quality | 20/10 S/D | 10/5 S/D |
Orientation | +/-0.3° | +/-0.1° |
Parallelism | <20 arc sec | <10 arc sec |
Flatness | λ/4 | λ/6 |
Coating | AR Coating or P Coating |
Basic Properties:
Transparency Range | 420~5200nm | Optical Homogeneity | ~ 5 x 10-5 /cm |
Refractive indices@1064nm | ne=2.146, no=2.220@1300nm ne=2.156, no=2.232@1064nm ne=2.203, no=2.286@632.8nm |
NLO Coefficients | d33 = 86 x d36 (KDP) d31 =11.6 x d36 (KDP) d22 = 5.6 x d36 (KDP) |
Effective NLO Coefficients | γT33 = 32 pm/V, γS33 = 31 pm/V γT31 =10 pm/V, γS31=8.6 pm/V γT22 = 6.8 pm/V, γS22= 3.4 pm/V |
Half-Wave Voltage, DC Electrical field // z, light ⊥z: Electrical field // x or y, light // z: |
3.03 KV 4.02 KV |
Damage Threshold | 100 MW/cm2 (10ns, 1064nm) |
LiNbO3 Crystal is widely used as frequency doublers for wavelength >1μm and optical parametric oscillators (OPOs) pumped at 1064 nm as well as quasi-phase-matched (QPM) devices. Additionally due to its large Electro-Optic(E-O) and Acousto-Optic(A-O) coefficients, LiNbO3 crystal is the most commonly used material for Pockel Cells, Q-switches and phase modulators, waveguide substrate, and surface acoustic wave(SAW) wafers.
Application Notes: